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DMN5/L06VK/L06VAK/010VAK
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Drain-Gate Voltage R GS ≤ 1.0M Ω
Symbol
V DSS
V DGR
Value
50
50
Unit
V
V
Gate-Source Voltage
Drain Current (Note 6)
Continuous
Pulsed
Continuous
Pulsed
V GSS
I D
I DM
± 20
± 40
280
1.5
V
mA
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
250
500
-55 to +150
Unit
mW
° C/W
° C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
50
?
?
V
V GS = 0V, I D = 10μA
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = +25°C
I DSS
I GSS
?
?
?
?
60
1
500
nA
μA
nA
V DS = 50V, V GS = 0V
V GS = ±12V, V DS = 0V
V GS = ±10V, V DS = 0V
ON CHARACTERISTICS (Note 7)
50
nA
V GS = ±5V, V DS = 0V
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
I D(ON)
|Y fs |
V SD
0.49
?
?
?
0.5
200
0.5
?
?
?
?
1.4
?
?
1.0
3.0
2.5
2.0
?
?
1.4
V
Ω
A
mS
V
V DS = V GS , I D = 250μA
V GS = 1.8V, I D = 50mA
V GS = 2.5V, I D = 50mA
V GS = 5.0V, I D = 50mA
V GS = 10V, V DS = 7.5V
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
50
25
5.0
pF
pF
pF
V DS = 25V, V GS = 0V
f = 1.0MHz
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 10 - 2
2 of 6
www.diodes.com
July 2012
? Diodes Incorporated
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